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019071 PWR1120C ZB4BZ102 AD7871TQ HA5003 DB5006P 0000MH 20A04
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  d b 3 / d c 3 4 / d b 4 / d b 6 silicon bidirectional diac features absolute ratings(limiting values) electrical characteristics the three-layer , two-terminal, axial-lead, hermetically sealed diacs are designed specifically for triggering thyristors. they demonstrate low breakover current at breakover voltage as they withstand peak pulse current. the breakover symmetry is within three volts(db3,dc34,db4) or four volts(db6). these diacs are intended for use in thyrisitors phase control , circuits for lamp dimming, universal motor speed control and heat control. jf's db3/dc34/db4/db6 are bi-directional triggered diode designed to operate in conjunction with t riacs and scr's power dissipation on printed circuit(l=10mm) breakover v oltage (note 2 ) breakover v oltage symmetry c=22nf(note 2) see diagram 1 c=22nf(note 2) see diagram 1 c=22nf(note 2) min min min t yp 28 32 36 30 34 38 35 40 45 56 60 70 +4 +3 5 10 5 100 1.5 10 max max max max t yp i=(i bo to if=10ma) see diagram 1 see diagram 2 see diagram 3 v b =0.5 v bo max see diagram 1 breakover current (note1) leakage current (note1) dynamic breakover v oltage (note1) rise t ime (note1) output v oltage (note 1 ) p c mw a t stg /t j t a =50 c tp=10 m s f=100hz repetitive peak on-state current storage and operating junction t emperature c v v v v m a m s m a i trm v bo % +vbo % - % -vbo % % + v % v o i bo i b tr do-35(glass) dimensions in inches and (millimeters) 0.150(3.8) max 1.083(27.5) min 1.083(27.5) min 0.079(2.0) max dia 0.020(0.52) max dia 2.0 2.0 2.0 1.6 150 notes : 1.electrical characteristics applicable in both forward and reverse directions. 2.connected in parallel with the devices. symbols parameters v alue db3 dc34 db4 db6 units v alue db3 dc34 db4 db6 units parameters symbols t est condition mechanical da t a case : do-35 glass case w eight : approx. 0.13 gram j f high temperature soldering guaranteed : 260 !/ 10 seconds at terminals - 4 0 t o + 1 2 5 / - 4 0 t o + 1 1 0 xinghe electronics e?o?? gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017 1
2 diagram 1: current-voltage characteristics fig.1-power dissipation versus ambient temperature (maximum values) fig.3-peak pulse current versus pulse duration (maximum values) fig.2-relative variation of vbo versus junction temperature(typical values) diagram 2: test circuit for output voltage diagram 3: test circuit see diagram2 adjust r for i p =0.5a 10ma i bo i b 0.5 v bo v bo i p 90% 10% tr 10k w 220v 50hz 500k w d.u.t r=20 w v o 0.1 m f v +i f -i f +v -v t amb( c) p (mw) v bo (t j ) v bo (t j =25 c) 0 10 0.01 0.1 1 2 100 1000 10000 10 20 30 40 5 0 60 70 80 100 110 120 130 25 1.00 1.02 1.04 1.06 1.08 50 75 100 125 125 9 0 0 20 40 60 80 100 120 140 160 f=100hz t j initial=25 c i trm (a) tp( m s) t j ( c) gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017 d b 3 / d c 3 4 / d b 4 / d b 6 silicon bidirectional diac xinghe electronics e?o??


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